350 - 1100nm Amplified Si Free-Space Photodetector

Product Family Description

• Compact Design for Easy System Integration
• Si or InGaAs Photodetectors Ranging from 200 - 1700nm
• Biased or Amplified Models Available

Free-Space Photodetector Modules feature biased or amplified Si diodes, or a high speed InGaAs diode that cover the UV, VIS, NIR, and SWIR spectra from 200 – 1700nm. These detectors provide fast rise times and bandwidths for immediate detection for pulsed lasers, the Si version features 1ns rise times and bandwidths up to 350MHz and the InGaAs detectors feature 350ps rise times and a 5GHz bandwidth. The amplified Si detectors provide rise times from 10 – 35ns and a built-in fixed gain, low-noise transimpedance amplifier allowing for measurement of weak or low power sources down to femtowatt levels. Free-Space Photodetector Modules feature a compact design for easy integration into space constrained systems, an M4 mounting thread for post mounting, and a detachable 1” diameter optic mount for integration of filters and lenses. These modules are ideal for monitoring fast pulsed lasers, modulated CW optical sources, and applications requiring free-space optical detection, such as LIDAR.

Note: The biased Si and InGaAs photodetector modules can be powered with a 12V battery. The amplified Si photodetector modules require a ±12VDC power supply (#29-519), sold separately. When measuring high speed signals, a 50Ω terminating resistor is recommended.