3mm Dia., Four-Element Segmented InGaAs Photodiode

Product Family Description

• Four Individual Active Area Elements
• High Response Uniformity and Low Crosstalk
• Ideal for Position Detection and Beam Alignment
• Segmented Silicon Photodiodes and InGaAs Photodiodes Also Available

Segmented InGaAs Photodiodes feature large active areas divided into four individual elements. The four elements of these photodiodes have high response uniformity and low crosstalk, enabling their use in accurate nulling or centering applications. These photodiodes are stable over time and temperature, providing responsivity from 900 - 1700nm with excellent responsivity between 1100 - 1620nm. Segmented InGaAs Photodiodes are ideal for position detection, beam alignment, and beam profiling applications in the near-infrared spectrum. Each photodiode is packaged in an isolated TO-5 or TO-8 can with an antireflection coated window to increase throughput.